Other
Ion Implanted Solar Cells
Abstract
Ion implantation is investigated as a technique to fabricate solar cells on monocrystalline silicon. The effects of implanted species (As and P), implanted dopant concentration (1018–1021 cm-3), implant temperature(55° to 300°K) and annealing temperature (700° to 900°C) have been studied. Some progress has been made toward optimization of the various parameters.
Authors
Neilson JB; Vanderwel TM; Shewchun J; Thompson DA
Pagination
pp. 543-553
Publisher
Springer Nature
Publication Date
1977
DOI
10.1007/978-1-4613-4196-3_57