Conference
(Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence
Abstract
Photoluminescence and cathodoluminescence spectral imaging were performed across rectangular stripes etched in samples with InAsxP1-x quantum wells of constant thickness and variable composition grown on InP. In particular, the effects of different etching chemistries (CH4/H2/Ar and Cl2/CH4/Ar) were investigated. The results discussed deal with modifications of the luminescence line shapes (which differ with etching process) and with the …
Authors
Landesman J-P; Goktas NI; LaPierre RR; Ghanad-Tavakoli S; Pargon E; Petit-Etienne C; Levallois C; Jiménez J; Dadgostar S
Volume
97
Pagination
pp. 43-55
Publisher
The Electrochemical Society
Publication Date
April 24, 2020
DOI
10.1149/09702.0043ecst
Conference proceedings
ECS Transactions
Issue
2
ISSN
1938-5862