Journal article
Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells
Abstract
Abstract Due to the increasing desire for nanoscale optoelectronic devices with green light emission capability and high efficiency, ternary III‐N‐based nanorods are extensively studied. Many efforts have been taken on the planar device configuration, which lead to unavoided defects and strains. With selective‐area molecular‐beam epitaxy, new “Russian Doll”‐type InGaN/AlGaN quantum wells (QWs) have been developed, which could largely alleviate …
Authors
Cheng S; Wu Z; Langelier B; Kong X; Coenen T; Hari S; Ra Y; Rashid RT; Pofelski A; Yuan H
Journal
Advanced Optical Materials, Vol. 8, No. 17,
Publisher
Wiley
Publication Date
September 2020
DOI
10.1002/adom.202000481
ISSN
2195-1071