Conference
Spatially-resolved EELS and EDS Analysis of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2
Abstract
Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Authors
Wu X; Couillard M; Lee M-S; Chen J-H; Botton G; Landheer D; Lu Z-H; Ng W-T; Chao T-S
Volume
10
Pagination
pp. 606-607
Publisher
Oxford University Press (OUP)
Publication Date
8 2004
DOI
10.1017/s1431927604884848
Conference proceedings
Microscopy and Microanalysis
Issue
S02
ISSN
1431-9276