Conference
40 Gbit/s transmission in a silicon-compatible Al2O3:Er3+ integrated optical amplifier
Abstract
Erbium-doped waveguide amplifiers (EDWAs) are of interest for their potential use in integrated photonic circuits. Unlike semiconductor optical amplifiers (SOAs), which are typically fabricated using costly III–V materials and are limited in their capacity to amplify WDM signals (≪ 20 Gbit/s per channel) due to transient carrier effects [1], EDWA fabrication and design is straightforward, they can be processed directly on silicon, and their …
Authors
Bradley JDB; Gay M; Simon JC; Wörhoff K; Pollnau M
Volume
1
Pagination
pp. 1-1
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2009
DOI
10.1109/cleoe-eqec.2009.5194739
Name of conference
CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference