Conference
Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis
Abstract
The influence of germanium ion current density on the residual defects in ion implanted Si/SiGe heterostructures is investigated. Data from [100] silicon wafers implanted with 400 keV 9/spl times/10/sup 16/ Ge/sup +//cm/sup 2/ shows that both the nature and concentration profile of residual defects below the amorphised silicon surface layer are highly sensitive to the Ge/sup +/ current density. Dose rates in the range of 7.3/spl times/10/sup …
Authors
Nejim A; Cristiano F; Knights AP; Barradas NP; Hemment PLF; Coleman PG
Volume
2
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1998
DOI
10.1109/iit.1998.813761
Name of conference
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)