Conference
Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology
Abstract
The effects of post-implant anneal conditions on the level of residual damage resulting from nitrogen and boron implants after different anneal processes are investigated using the Positron Annihilation Spectroscopy (PAS) technique. It is shown that after implantation there is a substantial defect concentration significantly below the range of the implants. However such damage is almost completely recovered after anneal in contrast with the …
Authors
Wright NG; Johnson CM; O'Neill AG; Horsfall A; Ortolland S; Adachi K; Phelps GJ; Knights AP; Coleman PG; Burrows CP
Volume
640
Publication Date
January 1, 2001
Conference proceedings
Materials Research Society Symposium Proceedings
ISSN
0272-9172