Journal article
Improved operation characteristics of long-wavelength lasers using strained MQW active layers
Abstract
Long-wavelength semiconductor lasers and amplifiers with strained MQW structures as active layer materials in the region of 1.48-1.55 /spl mu/m are reported. Various improvements in device performance by employing the strained MQW structures were experimentally demonstrated in high-power operation at 1.48 /spl mu/m, high-speed operation with narrow linewidth at 1.55 /spl mu/m, and polarization-insensitive optical amplification in the 1.5 /spl …
Authors
Mamijoh T; Horikawa H; Matsui Y; Sin YK; Nakajima M; Xu CQ; Ogawa Y
Journal
IEEE Journal of Quantum Electronics, Vol. 30, No. 2, pp. 524–532
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
1994
DOI
10.1109/3.283800
ISSN
0018-9197