Conference
Luminescence from Si Nanoclusters Formed in Silicon Oxide and Silicon Nitride Based Materials
Abstract
Si nanoclusters embedded in two different dielectric matrices, silicon oxide and silicon nitride, have been formed through annealing of Si-rich silicon oxide (SRSO) and Si-rich silicon nitride (SRSN) thin films. The light emitting properties of these materials have been analyzed through room temperature UV-excited photoluminescence (PL) experiments. Features of the PL spectra from both types are presented and the nature of light emission from …
Authors
Roschuk T; Zalloum OH; Wojcik J; Zhang H; Mascher P
Volume
6
Pagination
pp. 523-529
Publisher
The Electrochemical Society
Publication Date
April 27, 2007
DOI
10.1149/1.2728817
Conference proceedings
ECS Transactions
Issue
3
ISSN
1938-5862