Conference
InP-InAlAs and InGaP-InAlAs mixed spacers to reduce the gate leakage current in InAlAs/InGaAs/InP HEMTs
Abstract
In this work, we propose a comparative study of the behaviour of three HEMT structures at high reverse bias: a reference structure (S1) with a conventional InAlAs spacer, the second with an InP/InAlAs mixed spacer (S2) and the third with an In/sub 0.5/Ga/sub 0.5/P/InAlAs (S3) mixed spacer. We show a drastic decrease of the gate leakage current for the mixed spacer HEMTs, thanks to the large valence band offset between InP (or InGaP) and InGaAs. …
Authors
Letartre X; Rojo-Romeo P; Tardy J; Gendry M; Thompson D; Simmons JG
Pagination
pp. 384-387
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1997
DOI
10.1109/iciprm.1997.600166
Name of conference
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
Conference proceedings
Conference Proceedings 1998 International Conference on Indium Phosphide and Related Materials (Cat No98CH36129)
ISSN
1092-8669