DEPOSITION OF GOLD ONTO SILICON SURFACES AND SUBSEQUENT REDISTRIBUTION DURING THERMAL TREATMENTS.

Gold deposition from 10% HF solution, containing Au**1**9**8 ranging between . 01 and 10 ppm by weight, onto (111), (110) and (100) Si surfaces was measured using both radio tracer and ion beam back scattering techniques. During subsequent thermal oxidation of the silicon between 1000 degree C and 1100 degree C a number of Au atoms evaporated and were lost to the furnace and gas ambient remained on the oxide surface, were incorporated into the oxide layers or diffused into the silicon. The redistribution of adsorbed Au between these four areas was investigated for the Si-SiO//2, Si-SiO//2-PSG and Si-PSG systems.