A comparative study of the low frequency noise in InP based heterojunction field effect transistors (HFETs)

In this work we present a comparative study of the low frequency noise in different types of HFETs based on an InP substrate. Structures with different barriers (AlInAs, InP or a combination of both) and different channels (InGaAs, InGaAsP and InP) materials were investigated. Also, experiments on plain doped AlInAs and AlGaAs resistors were performed for comparison. This study concentrates on LFN sources induced by the distribution of traps within the different layers and interfaces which constitute the structures, resulting in channel carrier number fluctuations. Experiments were made on structures using a TLM configuration.