Conference
GaAs-Based Laser Diode Bonding-Induced Stress Investigation by Means of Simulation and Degree of Polarization of Photoluminescence Measurements
Abstract
GaAs-based single-mode laser diode bonding-induced stress has been investigated by the means of both simulation and Degree of Polarization of photoluminescence (DoP) measurements. This has been done for different submount materials, and different geometries have been modeled in order to determine the impact of these parameters on the induced stress. The comparison of simulation results and DoP measurements shows the degree of accuracy of our …
Authors
LeClech J; Cassidy DT; Biet M; Laruelle F; Bettiati M; Landesman J-P
Pagination
pp. 1-6
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
April 1, 2010
DOI
10.1109/esime.2010.5464589
Name of conference
2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)