Conference
Modeling Si-Ge Interdiffusion by a Vacancy Exchange Mechanism
Abstract
The vacancy exchange mechanism was used to model the interdiffusion of Si and Ge in Si/Si1-xGex/Si single quantum well structures. Diffusion was modeled for samples grown by molecular beam epitaxy and annealed at 900°C, 1000°C and 1100°C for different times in inert and oxidizing ambients. Intrinsic self diffusivities of Si and Ge as a function of Ge fraction in the structure used as the fitting parameters match values reported in the …
Authors
Hasanuzzaman M; Haddara YM
Pagination
pp. 1547-1550
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2005
DOI
10.1109/ccece.2005.1557275
Name of conference
Canadian Conference on Electrical and Computer Engineering, 2005.