The ballistic nano-transistor

We have achieved extremely high drive current performance and ballistic (T>0.8) transport using ultra-thin (<2 nm) gate oxides in sub-30 nm effective channel length nMOSFETs. The peak drive performance in an nMOSFET was observed at t/sub ox//spl ap/1.3 nm for a 1.5 V power supply voltage with T/sub n//spl ap/0.7, while the peak performance in a pMOSFET was observed at t/sub ox//spl ap/1.5 nm for a -1.5 V supply with T/sub p//spl ap/0.5. Since the carrier scattering in the channel is due predominately to interface roughness, reducing the transverse surface field, either by reducing the gate voltage or by increasing the oxide thickness, can be used to improve the transmittance T/sub n//spl rarr/0.85, T/sub p//spl rarr/0.6, while diminishing the drive current.