Conference
On the theoretical description of photoluminescence in disordered quantum structures
Abstract
A theory is suggested for the description of luminescence in semiconductor structures, with the essential role of localized states caused by disorder. The theory is based on the set of rate equations. In contrast to most previous theoretical studies, electrons and holes are treated not in the form of excitons but rather as independent species. Theoretical results are compared with new experimental data for the time-resolved photoluminescence in …
Authors
Rubel O; Baranovskii SD; Hantke K; Heber JD; Koch J; Thomas P; Marshall JM; Stolz W; Rühle WW
Volume
7
Pagination
pp. 115-120
Publication Date
February 1, 2005
Conference proceedings
Journal of Optoelectronics and Advanced Materials
Issue
1
ISSN
1454-4164