Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors

A lucky-drift model for impact ionization has been recently successfully used to account for avalanche phenomenon in amorphous selenium (a-Se). The model presumed angle symmetry for scattering of charge carriers on disorder potential. We check this model by computer simulations in one-dimensional case and show that the analytical formulation used so far essentially underestimates the ionization rate. Furthermore, the scattering symmetry should …