Conference
Low Driving-Voltage Optical Modulator Based on Carrier Depletion in Silicon with Periodically Interleaved P-N Junctions
Abstract
We present the novel design of a silicon modulator with low operation voltage of ≤ 3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 V·cm.
Authors
Li ZY; Xu D-X; Mckinnon R; Janz S; Schmid JH; Lapointe J; Cheben P; Yu JZ
Pagination
pp. 13-15
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2008
DOI
10.1109/group4.2008.4638080
Name of conference
2008 5th IEEE International Conference on Group IV Photonics