Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling

Positron annihilation spectroscopy has been used to profile the distribution of defects following implantation of 120keV Ge+ into (100) Si in the dose range l x 1010 - 1x104 cm-2. The openvolume defect profiles can be adequately fitted assuming a simple rectangular block distribution extending to 350nm. Using anodic oxidation and etching, a procedure is described which allows details of the defect tails beyond the range of the implanted ion, …