Journal article
Polycrystalline silicon resistors for integrated circuits
Abstract
The suitability of thin films of doped polycrystalline silicon on SiO2 substrates for the production of high value resistors for monolithic integrated circuits is considered. Resistors fabricated from this material posses the advantages of high sheet resistivity and dielectric isolation while still preserving an all silicon technology compatible with conventional production techniques.Relevant structural and electrical properties of doped …
Authors
King FD; Shewchun J; Thompson DA; Barber HD; Pieczonka WA
Journal
Solid-State Electronics, Vol. 16, No. 6, pp. 701–708
Publisher
Elsevier
Publication Date
June 1973
DOI
10.1016/0038-1101(73)90113-5
ISSN
0038-1101