Journal article
Equivalent Sheet Resistance of Intrinsic Noise in Sub-100-nm MOSFETs
Abstract
This paper presents the equivalent sheet resistance for the intrinsic channel thermal noise of sub-100-nm MOSFETs for the first time. This newly defined noise sheet resistance is particularly helpful when comparing the noise performance of devices in different technology nodes for low-noise applications. Experimental results for devices in 130-, 90-, and 65-nm CMOS technology nodes are demonstrated. Strategies for the development of future …
Authors
Chen C-H; Lee R; Tan G; Chen DC; Lei P; Yeh C-S
Journal
IEEE Transactions on Electron Devices, Vol. 59, No. 8, pp. 2215–2220
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
August 1, 2012
DOI
10.1109/ted.2012.2198651
ISSN
0018-9383