Study of radial growth in patterned self‐catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy

Abstract magnified image Ordered arrays of vertically aligned self‐catalyzed GaAs nanowires have been grown by gas source molecular beam epitaxy (GS‐MBE) on silicon substrates using nano‐patterned oxide templates. Several growth processes of different duration were performed under identical conditions and with identical sample preparation. To determine the influence of pattern parameters, the samples were prepared with 20 patterned areas, …