Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature

Equivalent bulk strength of the interface between p-Si/n-GaAs bonded through the surface activated bonding (SAB) method is found. The interface current was extensively investigated. Nonideal behavior of the pn junction current is found to be due to the tunneling current between the conduction band and valence band across the transition region associated with band gap states. Interface current decreases with increasing sputtering time and energy …