Journal article
Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200°C
Abstract
A novel hybrid plasma bonding (HPB) that combines sequential plasma activation (reactive ion etching followed by microwave radicals) with anodic bonding has been developed to achieve void-free and strong silicon/glass bonding at low temperature. The interfacial voids were observed at the silicon/glass interface both in the anodic bonding and in the plasma activated anodic bonding, but the voids were completely disappeared in the HPB method at …
Authors
Howlader MMR; Kibria MG; Zhang F; Kim MJ
Journal
Talanta, Vol. 82, No. 2, pp. 508–515
Publisher
Elsevier
Publication Date
July 15, 2010
DOI
10.1016/j.talanta.2010.05.001
ISSN
0039-9140