Journal article
Oxygen Plasma and Humidity Dependent Surface Analysis of Silicon, Silicon Dioxide and Glass for Direct Wafer Bonding
Abstract
Surface and interface characteristics of substrates are critical for reliable wafer bonding. Understanding the elemental and compositional states of surfaces after various processing conditions is necessary when bonding dissimilar materials. Therefore, we investigated the elemental and compositional states of silicon (Si), silicon dioxide (SiO2) and glass surfaces exposed to oxygen reactive ion etching (O2 RIE) plasma followed by storage in …
Authors
Alam AU; Howlader MMR; Deen MJ
Journal
ECS Journal of Solid State Science and Technology, Vol. 2, No. 12, pp. p515–p523
Publisher
The Electrochemical Society
Publication Date
2013
DOI
10.1149/2.007312jss
ISSN
2162-8769