Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C

In order to investigate the high temperature application of surface activated silicon/silicon wafer bonding, the wafers were bonded at room temperature and annealed up to 600°C followed by optical, electrical, mechanical and nanostructure characterization of the interface. Void-free interface with high bonding strength was observed that was independent of the annealing temperature. The bonding strength was as high as 20MPa. The normalized …