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Numerical Modeling of Silicon Nanocrystal...
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Numerical Modeling of Silicon Nanocrystal Down-Shifting Layers for Enhanced CIGS Solar Cell Performance

Abstract

The performance effects of silicon nanocrystals (SiNC) embedded in a silicon dioxide matrix to act as a downshifting (DS) layer mounted on the top surface of a polycrystalline Cu(In,Ga)Se2 solar cell are explored numerically. The DS layers are modeled by modifying the incident AM1.5G spectrum based on the absorption and emission properties of the SiNC. The effects of the DS layers as an anti-reflection coating leads to an 11.4% relative …

Authors

Gabr AM; Walker¹ A; Trojnar A; Hall TJ; Kleiman RN; Hinzer K

Pagination

pp. 1003-1007

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

June 1, 2013

DOI

10.1109/pvsc.2013.6744310

Name of conference

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

Labels

Sustainable Development Goals (SDG)