Size distribution of silicon nanoclusters...

Size distribution of silicon nanoclusters determined by Transmission Electron Microscopy

Abstract

Silicon nanoclusters were formed in SiO2by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.

Authors

Mokry CR; Simpson PJ; Knights AP

Pagination

pp. 268-269

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2008

DOI

10.1109/group4.2008.4638168

Name of conference

2008 5th IEEE International Conference on Group IV Photonics

Associated Experts

Andrew Knights

Professor, Faculty of Engineering

Visit profile

Labels

Fields of Research (FoR)

51 Physical Sciences 40 Engineering 4018 Nanotechnology

View published work (Non-McMaster Users)

Contact the Experts team

Get technical help

Provide website feedback