Conference
Size distribution of silicon nanoclusters determined by Transmission Electron Microscopy
Abstract
Silicon nanoclusters were formed in SiO2by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.
Authors
Mokry CR; Simpson PJ; Knights AP
Pagination
pp. 268-269
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2008
DOI
10.1109/group4.2008.4638168
Name of conference
2008 5th IEEE International Conference on Group IV Photonics