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1.6 kV 4H-SiC Schottky diodes for IGBT...
Conference

1.6 kV 4H-SiC Schottky diodes for IGBT applications

Authors

Johnson CM

Volume

2000

Pagination

pp. 241-245

Publisher

Institution of Engineering and Technology (IET)

Publication Date

January 1, 2000

DOI

10.1049/cp:20000252

Name of conference

8th International Conference on Power Electronics and Variable Speed Drives
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