Conference
Characterisation of 4H-SiC Schottky diodes for IGBT applications
Abstract
Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. High current SiC devices are achieved by parallel connection of a large number of small elements. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparisons made with Si PIN diodes at currents of up to 20 A and DC link voltages of up to 600 V. The …
Authors
Johnson CM; Rahimo M; Wright NG; Hinchley DA; Horsfall AB; Morrison DJ; Knights A
Volume
5
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2000
DOI
10.1109/ias.2000.882584
Name of conference
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129)
Conference proceedings
Conference Record of the 2000 IEEE Industry Applications Conference Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat No00CH37129)
ISSN
0197-2618