Conference
Junction Leakage Analysis of Vacancy Engineered Ultra‐Shallow p‐type Layers
Abstract
This study examines the effect of a silicon Vacancy Engineering Implant (VEI) on a boron doped ultra‐shallow junction, in terms of sheet resistance, junction depth and for the first time junction leakage—via conventional diode measurements and newer non‐contact techniques. It is demonstrated that by using a VEI combined with a 10 s, 800 °C anneal, it is possible to electrically activate the dopant to a level 5x higher than without a VEI, whilst …
Authors
Smith AJ; Antwis LD; Yeong SH; Knights AP; Colombeau B; Sealy BJ; Gwilliam RM; Seebauer EG; Felch SB; Jain A
Volume
1066
Pagination
pp. 22-25
Publisher
AIP Publishing
Publication Date
November 3, 2008
DOI
10.1063/1.3033600
Name of conference
AIP Conference Proceedings
Conference proceedings
AIP Conference Proceedings
Issue
1
ISSN
0094-243X