Junction Leakage Analysis of Vacancy Engineered Ultra‐Shallow p‐type Layers

This study examines the effect of a silicon Vacancy Engineering Implant (VEI) on a boron doped ultra‐shallow junction, in terms of sheet resistance, junction depth and for the first time junction leakage—via conventional diode measurements and newer non‐contact techniques. It is demonstrated that by using a VEI combined with a 10 s, 800 °C anneal, it is possible to electrically activate the dopant to a level 5x higher than without a VEI, whilst sustaining minimal boron diffusion. Furthermore, this thermal budget is significant enough to reduce the implantation damage that resides within the depletion region to a level that produces a junction leakage value of ∼35 μA/cm2, which is competitive with alternative techniques such as pre‐amorphization and solid phase epitaxial regrowth.