Conference
Electrical properties of Si-XII and Si-III formed by nanoindentation
Abstract
Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, socalled Si-l. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and pressure. As we demonstrate, such phases behave entirely differently to normal diamond-cubic silicon (Si-l) having different electrical properties. Two such phases, Si-Xll (8C8) and Si-XII (R8), …
Authors
Wang Y; Ruffell S; Sears K; Knights AP; Bradby JE; Williams JS
Volume
1
Pagination
pp. 105-106
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
December 1, 2010
DOI
10.1109/commad.2010.5699682
Name of conference
2010 Conference on Optoelectronic and Microelectronic Materials and Devices