Conference
Modeling the transient diffusion behavior of beryllium in gallium arsenide and the effect of encapsulant material on non-equilibrium point defect populations
Authors
Haddara YM; Deal MD; Bravman JC
Editors
Srinivasan GR; Murthy CS; Dunham ST
Series
ELECTROCHEMICAL SOCIETY SERIES
Volume
96
Pagination
pp. 142-148
Publisher
ELECTROCHEMICAL SOCIETY INC
Publication Date
January 1, 1996
ISBN-10
1-56677-154-4
Name of conference
4th International Symposium on Process Physics and Modeling in Semiconductor Technology
Conference place
LOS ANGELES, CA
Conference start date
May 5, 1996
Conference end date
May 10, 1996
Conference proceedings
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY
Issue
4