Conference
Materials and Device Development for Silicon Photonic Detectors
Abstract
This submission provides an overview of the device structures currently used in silicon photonic detector circuits. While germanium detectors dominate for applications up to 1610nm, longer wavelengths require GeSn alloys, III-V bonding techniques or defect engineered devices.
Authors
Knights AP
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
May 1, 2016
DOI
10.1109/ccece.2016.7726632
Name of conference
2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)