The Manipulation and Alignment of Silicon Carbide Whiskers for Gallium Nitride Epitaxial Growth

As a substrate candidate for low‐cost III ‐nitride thin film growth, 3 C – SiC whiskers are employed and manipulated in this work. The alignment of the whiskers is achieved on a patterned 3M Vikuiti ™ Brightness Enhancement Film surface. The degree of whisker alignment using this approach is higher than the whiskers lined up by extrusion methods according to X ‐ray diffraction ( XRD ) analysis. The aligned whiskers are transferred from the …