Journal article
Low-Bias Performance of Avalanche Photodetector-A Time-Domain Approach
Abstract
In this paper, the performance of the InP-InGaAs avalanche photodiode (APD) at low bias voltages has been investigated directly from its impulse response without using any fitting parameters. The important mechanisms responsible for low-bias performance are the emission of holes from the InP-InGaAs interface potential-trap in the valence band, the velocity of the carriers, and the diffusion of photogenerated holes from the undepleted region to …
Authors
Das NR; Deen MJ
Journal
IEEE Journal of Quantum Electronics, Vol. 37, No. 1, pp. 69–74
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
2001
DOI
10.1109/3.892726
ISSN
0018-9197