Modelling of breakdown voltage and its temperature dependence in SAGCM InP/InGaAs avalanche photodiodes

We investigate breakdown voltage and its temperature dependence from -40/spl deg/C to 110/spl deg/C in SAGCM InP/InGaAs avalanche photodiodes. The experimental data shows that the breakdown voltage is approximately a linear function of temperature, with a temperature coefficient /spl eta/ between 0.14 to 0.18 Vspl deg/C, and this /spl eta/ is in agreement with our physical model. The successful application of the physical model implies that the empirical formula used here for temperature dependence of the impact ionization coefficients in InP is verified.<>