Conference
Modelling of breakdown voltage and its temperature dependence in SAGCM InP/InGaAs avalanche photodiodes
Abstract
We investigate breakdown voltage and its temperature dependence from -40/spl deg/C to 110/spl deg/C in SAGCM InP/InGaAs avalanche photodiodes. The experimental data shows that the breakdown voltage is approximately a linear function of temperature, with a temperature coefficient /spl eta/ between 0.14 to 0.18 Vspl deg/C, and this /spl eta/ is in agreement with our physical model. The successful application of the physical model implies that the …
Authors
Ma CLF; Deen MJ; Tarof LE; Yu J
Pagination
pp. 583-586
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1994
DOI
10.1109/iedm.1994.383341
Name of conference
Proceedings of 1994 IEEE International Electron Devices Meeting
Conference proceedings
International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217)
ISSN
0163-1918