Conference
Analytical Determination of MOSFET's High-Frequency Noise Parameters from NF50 Measurements and Its Application in RFIC Design
Abstract
An analytical method, along with closed-form solutions, to determine high-frequency (HF) noise parameters of the MOSFET from its noise figure (NF) measurements with an arbitrary source impedance is presented and experimentally verified. This method allows for the determination of the minimum noise figure, ${\hbox{NF}}_{\min}$, equivalent noise resistance, $R_{n}$, and optimum source admittance $Y_{opt}$, of MOSFET directly from a single …
Authors
Asgaran S; Deen MJ; Chen C-H; Rezvani GA; Kamali Y; Kiyota Y
Volume
42
Pagination
pp. 1034-1043
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
May 1, 2007
DOI
10.1109/jssc.2007.894309
Conference proceedings
IEEE Journal of Solid-State Circuits
Issue
5
ISSN
0018-9200