Conference
Unique dc characteristics of a new gated lateral pnp bipolar junction transistor (BJT) using 0.8 mu m BiCMOS technology
Authors
Deen MJ; Yan ZX
Volume
74
Pagination
pp. S189-S194
Publisher
NATL RESEARCH COUNCIL CANADA
Publication Date
January 1, 1996
Name of conference
7th Canadian Semiconductor Technology Conference
Conference place
CHATEAU LAURIER, OTTAWA, CANADA
Conference start date
August 14, 1995
Conference end date
August 18, 1995
Conference proceedings
CANADIAN JOURNAL OF PHYSICS
ISSN
0008-4204