Journal article
Calculating the Photocurrent and Transit-Time-Limited Bandwidth of a Heterostructure p-i-n Photodetector
Abstract
In this paper, we have calculated the photocurrent and transit-time-limited bandwidth of a heterostructure p-i-n photodetector. The effective heights of potential barriers at the heterojunction interfaces in the valence band and conduction band have been calculated at different bias voltage and grading lengths for InP–In0.53Ga0.47As and Al0.2Ga0.8As–GaAs systems. The rates of thermionic emission from the trap can then be easily estimated for …
Authors
Das NR; Deen MJ
Journal
IEEE Journal of Quantum Electronics, Vol. 37, No. 12,
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
2001
DOI
10.1109/3.970904
ISSN
0018-9197