Effect of the forward biasing the source-substrate junction in n-metal–oxide–semiconductor transistors for possible low power complementary metal–oxide–semiconductor integrated circuits’ applications

The use of forward biasing the source-substrate junction in metal–oxide–semiconductor transistors, to reduce its threshold voltage is a simple method to realize low power complementary metal–oxide–semiconductor integrated circuits. A 2 μm long n-metal–oxide–semiconductor field effect transistor was used as the device under test. The threshold voltage was measured in the temperature range of 300–77 K, using two different methods. The classic …