Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters

This article presents an extraction method to obtain the channel thermal noise in metal-oxide-semiconductor field effect transistor (MOSFETs) directly from the dc, scattering parameter and rf noise measurements. In this extraction method, the transconductance (gm), output resistance (RDS), and source and drain resistances (RS and RD) are obtained from dc measurements. The gate resistance (RG) is extracted from scattering-parameter measurements, …