Impurity Dispersion and Low‐Frequency Noise in Nanoscale MOS Transistors

To remedy small‐geometry effects in nanoscale MOS transistors, e.g. drain induced barrier lowering, one uses δ‐doping layers. The statistical variation of the atom’s positions in ion‐implanted δ‐doping layers is denoted as “frozen noise,” and is correlated with the low frequency noise. The temporal accumulation of variance from “frozen noise” produces 1/f noise.