Noise in Advanced Electronic Devices and Circuits

State‐of‐the‐art low‐frequency and high‐frequency noise performance and modeling in modern semiconductor devices and circuits are discussed. The increase of noise‐to‐DC current ratio may compromise the circuit applications in near future. The low‐frequency noise (LFN) tends to a log‐normal distribution. Since the random‐telegraph‐signal (RTS) noise is pronounced in submicron devices, then new techniques being used to characterize of multilevel RTS are discussed. High‐frequency noise modeling and sample experimental results are presented, including the important effect of gate‐tunneling current for future devices. For the RF circuits, we discuss the phase noise in voltage‐controlled oscillators (VCO) based on ring oscillators and LC‐tank VCOs with and without automatic amplitude control. Finally, the effects of hot‐carrier stress on the performance of a VCO is presented and discussed.