Low frequency noise as a characterization tool for InP- and GaAs-based double-barrier resonant tunnelling diodes

This paper describes the application of low frequency noise measurements to study impurity states in three types of double-barrier resonant tunnelling diode (RTD). The noise in two types of RTD could be modelled as a combination of 1/ƒ and generation-recombination (G-R) components, in which the G-R noise displays characteristic shoulders in the noise spectra, owing to its lorentzian nature, and in which each shoulder has an associated amplitude …