Conference
Intrinsic Noise Currents in Deep Submicron Mosfets
Abstract
A systemic extraction method to obtain the induced gate noise (igig*), channel thermal noise (idid*)and their cross-correlation term (igid*) in submicron MOSFETs directly from scattering and RF noise measurements is presented and verified with measurements. The extracted noise currents versus frequency, bias condition and channel length for MOSFETs from a 0.18µm CMOS process are presented and discussed.
Authors
Chen C-H; Deen MJ; Cheng Y; Matloubian M
Volume
2
Pagination
pp. 836-839
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2001
DOI
10.1109/mwsym.2001.967022
Name of conference
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)