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Ionization coefficient measurements in InP by...
Conference

Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)

Authors

An S; Clark WR; Deen MJ; Vetter AS; Svilans M

Volume

3287

Pagination

pp. 48-59

Publisher

SPIE, the international society for optics and photonics

Publication Date

April 8, 1998

DOI

10.1117/12.304505

Name of conference

Photodetectors: Materials and Devices III

Conference proceedings

Proceedings of SPIE--the International Society for Optical Engineering

ISSN

0277-786X
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