DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and I B –I E plane fitting. Application of the five methods to a 0.8 × 16 μm 2 npn BJT shows that all but the method of impact ionization yield comparable R c and R bb values at …