High-frequency noise modelling and the scaling of the noise parameters of polysilicon emitter bipolar junction transistors

This paper presents detailed results from modelling the four noise parameters: minimum noise figure (NF MIN ), noise resistance (R N ), optimal source resistance (R S,OPT ), and reactance (X S,OPT ) as functions of frequency and collector-biasing current. Compared to previous BJT (bipolar junction transistor) high-frequency noise models, we include the emitter resistance, which results in an increased input device impedance, and a degeneration …