Journal article
High frequency noise of MOSFETs. II. Experiments
Abstract
In this paper, a set of scattering and noise measurements on devices fabricated in both 0.8μm BiCMOS technology and a 0.35 μm CMOS technology were conducted to confirm the noise model proposed in ``High frequency noise of MOSFETs. I. Modeling'' [Chen, C. H. and Deen, M. J., Direct Calculation of the MOSFET High frequency noise Parameters, High frequency noise of MOSFETs. I. Modeling. Solid State Electronics, J. Vacuum Sci. Technol, 1998, 16(2), …
Authors
Chen CH; Deen MJ; Yan ZX; Schroter M; Enz C
Journal
Solid-State Electronics, Vol. 42, No. 11, pp. 2083–2092
Publisher
Elsevier
Publication Date
11 1998
DOI
10.1016/s0038-1101(98)00193-2
ISSN
0038-1101